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Full Discussion: GRID containers technology
Operating Systems AIX GRID containers technology Post 79030 by dheram on Monday 25th of July 2005 03:27:58 AM
Old 07-25-2005
Question GRID containers technology

Hi forum,

I am aware that on Hp-Superdome technology (Blade Servers) is avaliable while on Solaris GRID technology is the latest in the market. I would like to know if similar high end technology is also available for AIX ?
 

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LOTRS(3)						 MBK LOGICAL STRUCTURE DEFINITIONS						  LOTRS(3)

NAME
lotrs - mbk logical transistor DESCRIPTION
The lotrs is used to describe a logical transistor. It is mostly used to describe leaf cells in terms of transistors interconnections, and as a result of layout extractions. Since the only target technology is CMOS, only NMOS and PMOS transistors are used. The declarations needed to work on lotrs are available in the header file "/labo/include/mlo.h". The following C structure supports the description of the logical transistor : typedef struct lotrs { struct lotrs *NEXT; struct locon *DRAIN; struct locon *GRID; struct locon *SOURCE; struct locon *BULK; char *TRNAME; long X,Y; unsigned short WIDTH, LENGTH; unsigned short PS, PD; unsigned short XS, XD; char TYPE; struct ptype *USER; } lotrs_list; NEXT Pointer to the next lotrs of the list. DRAIN Pointer to the drain connector of the transistor. This connector is, of course unique. See locon(3) for details. GRID Pointer to the grid connector of the transistor. This connector is, of course unique. See locon(3) for details. SOURCE Pointer to the source connector of the transistor. This connector is, of course unique. See locon(3) for details. BULK Pointer to the bulk connector of the transistor. This connector is, of course unique. See locon(3) for details. TRNAME Transistor instance name X, Y Coordinates of the transistor in a layout. These informations have sens only if the transistor netlist is the result of a layout extraction. They are otherwise set to zero. These coordinates are given in micron times the scale factor SCALE_X, since the extracted view is technology dependant. WIDTH, LENGTH Respectivly width and length of the transistor grid. PS, PD Respectivly perimeter of the source and drain, in micron times the scale factor SCALE_X. XS, XD These values are needed to compute respectivly the source and drain areas. Let As be the source area in square microns, and Width be the transistor grid width in micron, then lotrs->XS = As / Width * SCALE_X TYPE Canal type of the transistor. Six legal values are available : TRANSN N type MOS transistor TRANSP P type MOS transistor TRANSN_FAST High speed N type MOS transistor TRANSP_FAST High speed P type MOS transistor TRANSN_HVIO Low Leakage N type MOS transistor TRANSP_HVIO Low Leakage P type MOS transistor USER Pointer to a ptype list, see ptype(3) for details, that is a general purpose pointer used to share informations on the transistor. Remark : In integrated techniques, NMOS transistor bulk for digital circuits is always set to ground, and PMOS transistor bulk for digital circuits is always set to positive supply. SEE ALSO
mbk(1), addlotrs(3), dellotrs(3), locon(3), lofig(3), ptype(3). BUG REPORT
This tool is under development at the ASIM department of the LIP6 laboratory. We need your feedback to improve documentation and tools. ASIM
/LIP6 August 6, 2002 LOTRS(3)
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