03-08-2012
32MB USB Memory Stack Not Supported on Android?
Running latest Android for Galaxy Tab 8.9 and bought a 32GB USB flash memory stick for file transfers, etc. Would not work. Searched the net for clues and could not find any. Then, back at the IT store, found out that Galaxy Tab currently only supports up to 16GB for the USD flash memory stick.
Does anyone know if this is an Android limitation based on the current OS, or is the limited tied to some other parameter like available internal memory?
Seems to be that the available memory does not matter; and the issue is that 32GB is not yet supported by Android (for these USB memory sticks).
Anyone have experiences to share?
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LEARN ABOUT REDHAT
iflash2_mtd
IFLASH2_MTD(4) Kernel Interfaces Manual IFLASH2_MTD(4)
NAME
iflash2_mtd - memory technology driver for Intel Series 2 flash
SYNOPSIS
insmod iflash2_mtd.o [pc_debug=n] [mem_speed=n] [word_width=n] [vpp_timeout_period=n] [vpp_settle=n] [erase_timeout=n] [erase_limit=n]
[retry_limit=n] [max_tries=n] [mem_speed=n] [word_width=n]
DESCRIPTION
Iflash2_mtd is a memory technology driver for Intel Series 2 and Series 100 flash devices. Memory technology drivers are used by Card Ser-
vices to provide device-independent access for memory cards through bulk memory services.
Writing to Series 2 and Series 100 flash devices is very processor intensive. Individual words are written one at a time, at a speed of
roughly 10 us per word. This busy period is too short to schedule other processes to run, so the driver will not yield the processor until
an entire block is written.
PARAMETERS
pc_debug=n
Selects the PCMCIA debugging level. This parameter is only available if the module is compiled with debugging enabled. A non-zero
value enables debugging.
mem_speed=n
Sets the access speed of shared memory windows, in nanoseconds. The default is 0 (i.e., no extra wait states). Values of up to
1000 are legal.
word_width=n
A flag indicating if memory windows should be configured for 8-bit (if 0) or 16-bit (if 1) transfers. The default is 1 (16-bit).
vpp_timeout_period=n
In milliseconds, this specifies the maximum idle period after a write operation before programming power will be switched off. The
default is 1000 ms.
vpp_settle=n
In milliseconds, this gives a delay between when programming power is switched on, and when the device is assumed to be powered up
and ready to receive erase or write commands. The default is 100 ms.
erase_timeout=n
In milliseconds, specifies the poll interval for monitoring the status of a bulk erase operation. The default is 100 ms.
erase_limit=n
In milliseconds, specifies the maximum elapsed time before an erase operation is assumed to have failed. The default is 10000 ms.
retry_limit=n
The maximum number of retries for a write operation. The default is 4.
max_tries=n
The maximum number of status register polls before a single word write is assumed to have timed out. The default is 4096.
AUTHOR
David Hinds - dahinds@users.sourceforge.net
SEE ALSO
iflash2+_mtd(4), memory_cs(4).
pcmcia-cs 2000/06/12 21:24:48 IFLASH2_MTD(4)